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| M27C322 32 Mbit (2Mb x16) UV EPROM and OTP EPROM s 5V 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION - Active Current 50mA at 5MHz 1 42 42 s s s s - Stand-by Current 100A s s s 1 PROGRAMMING VOLTAGE: 12V 0.25V PROGRAMMING TIME: 50s/word ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Device Code: 0034h FDIP42W (F) PDIP42 (P) Figure 1. Logic Diagram DESCRIPTION The M27C322 is a 32 Mbit EPROM offered in the UV range (ultra violet erase). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as 2 MWords of 16 bit. The pin-out is compatible with a 32 Mbit Mask ROM. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C322 is offered in PDIP42 package. VCC 21 A0-A20 16 Q0-Q15 E GVPP M27C322 VSS AI02156 April 2000 1/13 M27C322 Figure 2A. DIP Connections A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS GVPP Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 42 2 41 3 40 4 39 5 38 6 37 7 36 35 8 9 34 10 33 M27C322 32 11 31 12 30 13 29 14 28 15 27 16 17 26 18 25 19 24 20 23 22 21 AI02157 Table 1. Signal Names A0-A20 Address Inputs Data Outputs Chip Enable Output Enable / Program Supply Supply Voltage Ground A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 A20 VSS Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q0-Q15 E GVPP VCC VSS DEVICE OPERATION The operating modes of the M27C322 are listed in the Operating Modes Table. A single power supply is required in the read mode. All inputs are TTL compatible except for V PP and 12V on A9 for the Electronic Signature. Read Mode The M27C322 has a word-wide organization. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data to the output pins independent of device selection. Assuming that the addresses are stable, the address access time (tAVQV) is equal to the delay from E to output (tELQV). Data is available at the output after a delay of t GLQV from the falling edge of GVPP, assuming that E has been low and the addresses have been stable for at least tAVQVtGLQV. Standby Mode The M27C322 has a standby mode which reduces the supply current from 50mA to 100A. The M27C322 is placed in the standby mode by applying a CMOS high signal to the E input.When in the standby mode, the outputs are in a high impedance state, independent of the GVPP input. Two Line Output Control Because EPROMs are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while GVPP should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. 2/13 M27C322 Table 2. Absolute Maximum Ratings (1) Symbol TA TBIAS TSTG VIO (2) VCC VA9 (2) VPP Parameter Ambient Operating Temperature (3) Temperature Under Bias Storage Temperature Input or Output Voltage (except A9) Supply Voltage A9 Voltage Program Supply Voltage Value -40 to 125 -50 to 125 -65 to 150 -2 to 7 -2 to 7 -2 to 13.5 -2 to 14 Unit C C C V V V V Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum DC voltage on Input or Output is -0.5V with possible undershoot to -2.0V for a period less than 20ns. Maximum DC voltage on Output is V CC +0.5V with possible overshoot to VCC +2V for a period less than 20ns. 3. Depends on range. Table 3. Operating Modes Mode Read Output Disable Program Program Inhibit Standby Electronic Signature Note: X = VIH or VIL, V ID = 12V 0.5V. E VIL VIL VIL Pulse VIH VIH VIL GVPP VIL VIH VPP VPP X VIL A9 X X X X X VID Q15-Q0 Data Out Hi-Z Data In Hi-Z Hi-Z Codes Table 4. Electronic Signature Identifier Manufacturer's Code Device Code A0 VIL VIH Q7 0 0 Q6 0 0 Q5 1 1 Q4 0 1 Q3 0 0 Q2 0 1 Q1 0 0 Q0 0 0 Hex Data 20h 34h Note: Outputs Q15-Q8 are set to '0'. 3/13 M27C322 Table 5. AC Measurement Conditions High Speed Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 10ns 0 to 3V 1.5V Standard 20ns 0.4V to 2.4V 0.8V and 2V Figure 3. AC Testing Input Output Waveform Figure 4. AC Testing Load Circuit 1.3V High Speed 3V 1.5V 0V DEVICE UNDER TEST 2.0V 0.8V AI01822 1N914 3.3k Standard 2.4V OUT CL 0.4V CL = 30pF for High Speed CL = 100pF for Standard CL includes JIG capacitance AI01823B Table 6. Capacitance (1) (TA = 25 C, f = 1 MHz) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 10 12 Unit pF pF Note: 1. Sampled only, not 100% tested. System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the supplies to the devices. The supply current ICC has three segments of importance to the system designer: the standby current, the active current and the transient peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device outputs. The associated transient voltage peaks can be suppressed by complying with the two line out- put control and by properly selected decoupling capacitors. It is recommended that a 0.1F ceramic capacitor is used on every device between V CC and VSS. This should be a high frequency type of low inherent inductance and should be placed as close as possible to the device. In addition, a 4.7F electrolytic capacitor should be used between V CC and VSS for every eight devices. This capacitor should be mounted near the power supply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces. 4/13 M27C322 Table 7. Read Mode DC Characteristics (1) (TA = 0 to 70 C, -40 to 85 C or -40 to 125 C; VCC = 5V 10%; VPP = VCC) Symbol ILI ILO Parameter Input Leakage Current Output Leakage Current Test Condition 0v VIN VCC 0V VOUT VCC E = VIL, GVPP = VIL, IOUT = 0mA, f = 8MHz ICC Supply Current E = VIL, GVPP = VIL, IOUT = 0mA, f = 5MHz Supply Current (Standby) TTL Supply Current (Standby) CMOS Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL IOL = 2.1mA IOH = -400A 2.4 E = VIH E > VCC - 0.2V VPP = VCC -0.3 2 50 1 100 10 0.8 VCC + 1 0.4 mA mA A A V V V V Min Max 1 10 70 Unit A A mA ICC1 ICC2 IPP VIL VIH (2) VOL VOH Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Maximum DC voltage on Output is VCC +0.5V. Table 8. Read Mode AC Characteristics (1) (TA = 0 to 70 C, -40 to 85 C or -40 to 125 C; VCC = 5V 10%; VPP = VCC) M27C322 Symbol Alt Parameter Test Condition -80 (3) Min tAVQV tELQV tGLQV tEHQZ (2) tGHQZ (2) tAXQX tACC tCE tOE tDF tDF tOH Address Valid to Output Valid Chip Enable Low to Output Valid Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Address Transition to Output Transition E = VIL, GVPP = VIL GVPP = VIL E = VIL GVPP = VIL E = VIL E = VIL, GVPP = VIL 0 0 5 Max 80 80 40 40 40 0 0 5 -100 Min Max 100 100 50 40 40 ns ns ns ns ns ns Unit Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed AC measurement conditions. 5/13 M27C322 Figure 5. Read Mode AC Waveforms A0-A20 VALID tAVQV tAXQX VALID E tGLQV GVPP tELQV Q0-Q15 tGHQZ Hi-Z tEHQZ AI02207 Table 9. Programming Mode DC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12V 0.25V) Symbol ILI ICC IPP VIL VIH VOL VOH VID Parameter Input Leakage Current Supply Current Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL A9 Voltage IOL = 2.1mA IOH = -2.5mA 3.5 11.5 12.5 E = VIL -0.3 2.4 Test Condition VIL VIN VIH Min Max 10 50 50 0.8 VCC + 0.5 0.4 Unit A mA mA V V V V V Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 6/13 M27C322 Table 10. MARGIN MODE AC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12V 0.25V) Symbol tA9HVPH tVPHEL tA10HEH tA10LEH tEXA10X tEXVPX tVPXA9X Alt tAS9 tVPS tAS10 tAS10 tAH10 tVPH tAH9 Parameter VA9 High to VPP High VPP High to Chip Enable Low VA10 High to Chip Enable High (Set) VA10 Low to Chip Enable High (Reset) Chip Enable Transition to VA10 Transition Chip Enable Transition to VPP Transition VPP Transition to VA9 Transition Test Condition Min 2 2 1 1 1 2 2 Max Unit s s s s s s s Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. Table 11. Programming Mode AC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12V 0.25V) Symbol tAVEL tQVEL tVCHEL tVPHEL tVPLVPH tELEH tEHQX tEHVPX tVPLEL tELQV tEHQZ (2) tEHAX Alt tAS tDS tVCS tOES tPRT tPW tDH tOEH tVR tDV tDFP tAH Parameter Address Valid to Chip Enable Low Input Valid to Chip Enable Low VCC High to Chip Enable Low VPP High to Chip Enable Low VPP Rise Time Chip Enable Program Pulse Width (Initial) Chip Enable High to Input Transition Chip Enable High to VPP Transition VPP Low to Chip Enable Low Chip Enable Low to Output Valid Chip Enable High to Output Hi-Z Chip Enable High to Address Transition 0 0 Test Condition Min 1 1 2 1 50 45 2 2 1 1 130 55 Max Unit s s s s ns s s s s s ns ns Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Sampled only, not 100% tested. Programming When delivered (and after each erasure for UV EPROM), all bits of the M27C322 are in the "1" state. Data is introduced by selectively programming "0"s into the desired bit locations. Although only "0"s will be programmed, both "1"s and "0"s can be present in the data word. The only way to change a "0" to a "1" is by die exposition to ultravi- olet light (UV EPROM). The M27C322 is in the programming mode when V PP input is at 12.V, GVPP is at VIH and E is pulsed to VIL. The data to be programmed is applied to 16 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. VCC is specified to be 6.25V 0.25V. 7/13 M27C322 Figure 6. MARGIN MODE AC Waveforms VCC A8 A9 tA9HVPH GVPP tVPHEL E tA10HEH A10 Set tEXA10X tEXVPX tVPXA9X A10 Reset tA10LEH AI00736B Note: A8 High level = 5V; A9 High level = 12V. Figure 7. Programming and Verify Modes AC Waveforms A0-A20 tAVEL Q0-Q15 tQVEL VCC tVCHEL GVPP tVPHEL E DATA IN VALID tEHAX DATA OUT tEHQX tEHQZ tEHVPX tELQV tVPLEL tELEH PROGRAM VERIFY AI02205 Note: BYTE = V IH. 8/13 M27C322 Figure 8. Programming Flowchart VCC = 6.25V, VPP = 12V SET MARGIN MODE n=0 E = 50s Pulse NO ++n = 25 YES NO VERIFY YES Last Addr NO ++ Addr FAIL YES RESET MARGIN MODE CHECK ALL WORDS 1st: VCC = 6V 2nd: VCC = 4.2V AI02206 PRESTO III Programming Algorithm The PRESTO III Programming Algorithm allows the whole array to be programed with a guaranteed margin in a typical time of 100 seconds. Programming with PRESTO III consists of applying a sequence of 50s program pulses to each word until a correct verify occurs (see Figure 8). During programing and verify operation a MARGIN MODE circuit must be activated to guarantee that each cell is programed with enough margin. No overprogram pulse is applied since the verify in MARGIN MODE provides the necessary margin to each programmed cell. Program Inhibit Programming of multiple M27C322s in parallel with different data is also easily accomplished. Except for E, all like inputs including GVPP of the parallel M27C322 may be common. A TTL low level pulse applied to a M27C322's E input and VPP at 12V, will program that M27C322. A high level E input inhibits the other M27C322s from being programmed. Program Verify A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with GVPP at V IL. Data should be verified with tELQV after the falling edge of E. On-Board Programming The M27C322 can be directly programmed in the application circuit. See the relevant Application Note AN620. Electronic Signature The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25C 5C ambient temperature range that is required when programming the M27C322. To activate the ES mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27C322, with V PP = VCC = 5V. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during Electronic Signature mode. Byte 0 (A0 = VIL) represents the manufacturer code and byte 1 (A0 = VIH) the device identifier code. For the STMicroelectronics M27C322, these two identifier bytes are given in Table 4 and can be read-out on outputs Q0 to Q7. ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27C322 is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 A. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 A range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27C322 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27C322 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27C322 window to prevent unintentional erasure. The recommended erasure procedure for M27C322 is exposure to short wave ultraviolet light which has a wavelength of 2537 A. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 30 W-sec/cm 2. The erasure time with this dosage is approximately 30 to 40 minutes using an ultraviolet lamp with 12000 W/cm 2 power rating. The M27C322 should be placed within 2.5cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure. 9/13 M27C322 Table 12. Ordering Information Scheme Example: Device Type M27 Supply Voltage C = 5V 10% Device Function 322 = 32 Mbit (2Mb x16) Speed -80 (1) = 80 ns -100 = 100 ns Package F = FDIP42W P = PDIP42 Temperature Range 1 = 0 to 70 C 3 = -40 to 125 C 6 = -40 to 85 C M27C322 -80 F 1 Note: 1. High Speed, see AC Characteristics section for further information. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. Table 13. Revision History Date July 1999 02/24/00 First Issue Programming Time changed Programming Flowchart changed (Figure 8) Presto III Programming Algorithm paragraph changed -40 to 85 C and -40 to 125 C temperature ranges added (Table 7, 8 and 12) 80ns speed class in High Speed AC measurement conditions Revision Details 04/04/00 10/13 M27C322 Table 14. FDIP42W - 42 pin Ceramic Frit-seal DIP with window, Package Mechanical Data mm Symbol Typ A A1 A2 A3 B B1 C D D2 E E1 e eA eB L S K K1 N 8.00 16.00 2.54 14.99 50.80 15.24 1.45 0.51 3.91 3.89 0.41 - 0.23 54.41 - - 14.50 - - 16.18 3.18 1.52 - - 4 42 Min Max 5.72 1.40 4.57 4.50 0.56 - 0.30 54.86 - - 14.90 - - 18.03 4.10 2.49 - - 11 0.315 0.630 0.100 0.590 2.000 0.600 0.057 0.020 0.154 0.153 0.016 - 0.009 2.142 - - 0.571 - - 0.637 0.125 0.060 - - 4 42 Typ Min Max 0.225 0.055 0.180 0.177 0.022 - 0.012 2.160 - - 0.587 - - 0.710 0.161 0.098 - - 11 inches Figure 9. FDIP42W - 42 pin Ceramic Frit-seal DIP with window, Package Outline A2 A3 A1 B1 B D2 D S N A L eA eB C e1 K 1 E1 E K1 FDIPW-b Note: Drawing is not to scale. 11/13 M27C322 Table 15. PDIP42 - 42 pin Plastic DIP, 600 mils width, Package Mechanical Data mm Symbol Typ A A1 A2 B B1 C D D2 E E1 e1 eA eB L S N 2.54 14.99 50.80 15.24 Min - 0.25 3.56 0.38 1.27 0.20 52.20 - - 13.59 - - 15.24 3.18 0.86 0 42 Max 5.08 - 4.06 0.53 1.65 0.36 52.71 - - 13.84 - - 17.78 3.43 1.37 10 0.100 0.590 2.000 0.600 Typ Min - 0.010 0.140 0.015 0.050 0.008 2.055 - - 0.535 - - 0.600 0.125 0.034 0 42 Max 0.200 - 0.160 0.021 0.065 0.014 2.075 - - 0.545 - - 0.700 0.135 0.054 10 inches Figure 10. PDIP42 - 42 pin Plastic DIP, 600 mils width, Package Outline A2 A1 B1 B D2 D S N A L eA eB C e1 E1 1 E PDIP Note: Drawing is not to scale. 12/13 M27C322 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 13/13 |
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